2SB564A discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for low frequency power amplifierapplications. pinning 1 = emitter2 = collector 3 = base to-92 dimensions in inches and (millimeters) .022(0.56).014(0.36) .050 (1.27) .148(3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4.83).170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. characteristic symbol rating unit collector-base voltage vcbo -30 v collector-emitter voltage vceo -25 v emitter-base voltage vebo -5 v collector current ic -1 a total power dissipation pd 800 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -30 - - v ic=-100ma, ie=0 collector-emitter breakdown voltage bvceo -25 - - v ic=-10ma, ib=0 emitter-base breakdown volatge bvebo -5 - - v ie=-100ma, ic=0 collector cutoff current icbo - - -100 na vcb =-30v, ie=0 collector-emitter saturation voltage (1) vce(sat) - - -0.5 v ic=-1a, ib=-100ma base-emitter saturation voltage (1) vbe(sat) - - -1.2 v ic=-1a, ib=-100ma dc current gain(1) hfe 70 - 400 - ic=-100ma, vce=-1v transition frequency ft - 110 - mhz ic=-10ma, vce =-6v, f=100mhz output capacitance cob - 18 - pf vcb =-6v, f=1mhz electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% classification of hfe rank o y gr range 70~140 120~240 200~400
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